Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

The piezo-resistive coefficient π₄₄ is reported for the case of single crystalline p-type silicon. By comparing the measured sensitivity of pressure sensors with the simulated sensitivity of these pressure sensors, we are able to extract π₄₄ since this is the only free parameter in the simulation. A value of π₄₄ = (108.3 ± 2.1) × 10⁻¹¹ Pa⁻¹ at a dopant concentration of (5.0 ± 4.5) × 10¹⁷ cm⁻³ was found, which is in good agreement with experimental literature data